Fouquet says the NXE:3800's productivity lets customers, notably in DRAM, replace multipatterning with single-exposure EUV, raising litho intensity.
this tool uh thanks to the higher productivity really allow customer to shift more multiatterning layer to single expose. So this basically allow a customer to reduce complexity, reduce uh yield loss, improve cycle time and we have seen that happening quite a bit uh in the last few months with DM where for the last nodes we really see a shift basically towards more EUV layer