Fouquet预计HBM和DDR需求强劲将导致DRAM供应在2026年及以后非常紧张,客户在1B/1C节点上增加EUV层数。
看DRAM,HBM需求当然非常强劲,DDR也是如此,这很可能导致至少在2026年、很可能更久的供应非常紧张。我们看到客户在爬坡1B、1C节点,这对满足需求至关重要,而在这些节点上他们正在增加EUV层数。原文 (en)
When I look at DRM there also the demand is very strong for HBM of course but also for DDR and this mostly will lead to a very tight supply at least in 2026 and most probably beyond that. So we see our customer ramping 1B 1 C node which are going to be critical for that demand and on those nodes we see them increasing basically the amount of EUV layers.