Fouquet预计光刻强度上升,DRAM从6F²向4F²过渡将推动浸没式和Low-NA EUV用量增加。
我们也预计Low-NA EUV未来的使用会持续增加。我们谈了很多光刻强度。例如DRAM从6F²向4F²过渡时,我们预计浸没式和Low-NA的使用都会更多。原文 (en)
We also expect low NAUV to continue to see more utilization moving forward. We talked a lot about litho intensity. When we look at for example the transition from 6 F square to 4S square on DM, we also expect both immersion and low NA to be used even more.